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ST110S16P0L датащи(PDF) 3 Page - International Rectifier |
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ST110S16P0L датащи(HTML) 3 Page - International Rectifier |
3 / 9 page ST110S Series dv/dt Maximum critical rate of rise of off-state voltage I RRM Max. peak reverse and off-state I DRM leakage current Blocking 500 V/µs T J = T J max. linear to 80% rated V DRM Parameter ST110S Units Conditions 20 mA T J = T J max, rated V DRM /V RRM applied T J Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% 15.5 Non lubricated threads (137) 14 Lubricated threads (120) wt Approximate weight 130 g Parameter ST110S Units Conditions 0.195 DC operation 0.08 Mounting surface, smooth, flat and greased Thermal and Mechanical Specification P GM Maximum peak gate power 5 T J = T J max, t p ≤ 5ms P G(AV) Maximum average gate power 1 T J = T J max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 2.0 A T J = T J max, t p ≤ 5ms +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage I GT DC gate current required T J = - 40°C to trigger mA T J = 25°C T J = 125°C V GT DC gate voltage required T J = - 40°C to trigger V T J = 25°C T J = 125°C I GD DC gate current not to trigger 10 mA Parameter ST110S Units Conditions 20 5.0 Triggering V GD DC gate voltage not to trigger 0.25 V T J = T J max TYP. MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W °C K/W Nm (lbf-in) Case style TO - 209AC (TO-94) See Outline Table VT J = T J max, t p ≤ 5ms To Order Next Data Sheet Index Previous Datasheet |
Аналогичный номер детали - ST110S16P0L |
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Аналогичное описание - ST110S16P0L |
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