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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KRC661E датащи(PDF) 1 Page - KEC(Korea Electronics) |
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KRC661E датащи(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 4 page  2002. 7. 10 1/4 SEMICONDUCTOR TECHNICAL DATA KRC660E~KRC664E EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. DIM MILLIMETERS A A1 B1 C TESV 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 B D H J B1 B 1 2 3 5 4 P P P5 +_ +_ +_ +_ +_ +_ +_ 1. Q IN (BASE) 2. Q , Q COMMON (EMITTER) 3. Q IN (BASE) 4. Q OUT (COLLECTOR) 5. Q OUT (COLLECTOR) 1 1 1 2 2 2 EQUIVALENT CIRCUIT MAXIMUM RATING (Ta=25 ) MARK SPEC R1 C E B Type Name 12 3 54 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA CHARACTERISTIC SYMBOL RATING UNIT Collector Power Dissipation PC * 200 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz Input Resistor KRC660E R1 - 4.7 - k KRC661E - 10 - KRC662E - 100 - KRC663E - 22 - KRC664E - 47 - TYPE KRC660E KRC661E KRC662E KRC663E KRC664E MARK NK NM NN NO NP ELECTRICAL CHARACTERISTICS (Ta=25 ) EQUIVALENT CIRCUIT (TOP VIEW) 1 Q1 23 54 Q2 Marking * Total Rating. Note : * Characteristic of Transistor Only. |
Аналогичный номер детали - KRC661E |
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Аналогичное описание - KRC661E |
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