поискавой системы для электроныых деталей |
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VT2045CHM3 датащи(PDF) 1 Page - Vishay Siliconix |
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VT2045CHM3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 6 page VT2045C-M3, VIT2045C-M3, VT2045CHM3, VIT2045CHM3 www.vishay.com Vishay General Semiconductor Revision: 21-Nov-13 1 Document Number: 89349 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A 0.41 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variations Dual common cathode PIN 1 PIN 2 PIN 3 K VIT2045C TO-220AB VT2045C 1 2 3 PIN 1 PIN 2 CASE PIN 3 TMBS ® 1 K 2 3 TO-262AA MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT2045C VIT2045C UNIT Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current (fig. 1) per device IF(AV) 20 A per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 A Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
Аналогичный номер детали - VT2045CHM3 |
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Аналогичное описание - VT2045CHM3 |
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