поискавой системы для электроныых деталей |
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BAT54-02V-V-G датащи(PDF) 1 Page - Vishay Siliconix |
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BAT54-02V-V-G датащи(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BAT54-02V-V-G www.vishay.com Vishay Semiconductors Rev. 1.1, 21-Jan-13 1 Document Number: 82394 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode MECHANICAL DATA Case: SOD-523 Weight: approx. 1.4 mg Molding compound flammability rating: UL94 V-0 Terminals: high temperature soldering guaranteed: 260 °C/4 x 10 s at terminals Packaging codes/options: 18/3K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Space saving SOD-523 package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 22321 1 2 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAT54-02V-V-G BAT54-02V-V-G-18 or BAT54-02V-V-G-08 Single diode .V Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage VRRM 30 V Forward continuous current IF 200 mA Repetitive peak forward current IFRM 300 mA Surge forward current IFSM 600 mA Power dissipation Ptot 150 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 680 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage 100 μA pulses V(BR) 30 V Leakage current Pulse test tp < 300 μs, < 2 % at V R = 25 V IR 2μA Forward voltage IF = 0.1mA, tp < 300 μs, < 2 % VF 240 mV IF = 1 mA, tp < 300 μs, < 2 % VF 320 mV IF = 10 mA, tp < 300 μs, < 2 % VF 400 mV IF = 30 mA, tp < 300 μs, < 2 % VF 500 mV IF = 100 mA, tp < 300 μs, < 2 % VF 800 mV Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr 5ns |
Аналогичный номер детали - BAT54-02V-V-G_15 |
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Аналогичное описание - BAT54-02V-V-G_15 |
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