BCP5616Q_15 datasheet(4/7 Pages) DIODES

номер детали	BCP5616Q

подробное описание детали	80V NPN MEDIUM POWER TRANSISTOR IN SOT223

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производитель	DIODES [Diodes Incorporated]

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BCP5616Q

Datasheet Number: DS36981 Rev. 2 - 2

4 of 7

www.diodes.com

May 2015

BCP5616Q

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

100

-

V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

80

-

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

5

-

V

IE = 10µA

Collector Cut-off Current

ICBO

-

0.1

20

µA

VCB = 30V

VCB = 30V, TA = +150°C

Emitter Cut-off Current

IEBO

-

20

nA

VEB = 4V

Static Forward Current Transfer Ratio (Note 9)

hFE

25

100

25

-

250

-

IC = 5mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 500mA, VCE = 2V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

-

0.5

V

IC = 500mA, IB = 50mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(on)

-

1.0

V

IC = 500mA, VCE = 2V

Transition Frequency

fT

150

-

MHz

IC = 50mA, VCE = 10V

f = 100MHz

Output Capacitance

Cobo

-

25

pF

VCB = 10V, f = 1MHz

Note:

9.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0

0.2

0.4

0.6

0.8

0

1

2

3

4

5

V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

Fig. 2 Typical DC Current Gain vs. Collector Current

0

50

100

150

200

250

0.001

0.01

0.1

1

10

I , COLLECTOR CURRENT (A)

C

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