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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SI7115DN датащи(PDF) 2 Page - Vishay Siliconix |
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SI7115DN датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 14 page  www.vishay.com 2 Document Number: 73864 S11-1908-Rev. C, 26-Sep-11 Vishay Siliconix Si7115DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJA 26 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 150 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 165 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 6.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 150 V, VGS = 0 V - 1 µA VDS = - 150 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 8 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4 A 0.245 0.295 VGS = - 6 V, ID = - 3 A 0.260 0.315 Forward Transconductancea gfs VDS = - 15 V, ID = 4 A 12 S Dynamicb Input Capacitance Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 1190 pF Output Capacitance Coss 61 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = - 75 V, VGS = - 10 V, ID = - 3 A 27.5 42 nC VDS = - 75 V, VGS = - 6 V, ID = - 3 A 23.2 35 Gate-Source Charge Qgs 5.4 Gate-Drain Charge Qgd 8.4 Gate Resistance Rg f = 1 MHz 1.3 6.1 9.2 Turn-On Delay Time td(on) VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 6 V, Rg = 1 20 30 ns Rise Time tr 95 145 Turn-Off DelayTime td(off) 38 60 Fall Time tf 34 51 Turn-On Delay Time td(on) VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 10 V, Rg = 1 11 18 Rise Time tr 28 42 Turn-Off DelayTime td(off) 52 78 Fall Time tf 35 53 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 13 A Pulse Diode Forward Currenta ISM - 15 Body Diode Voltage VSD IS = - 3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 65 90 ns Body Diode Reverse Recovery Charge Qrr 180 270 nC Reverse Recovery Fall Time ta 45 ns Reverse Recovery Rise Time tb 20 |
Аналогичный номер детали - SI7115DN_15 |
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Аналогичное описание - SI7115DN_15 |
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