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SIA459EDJ датащи(PDF) 2 Page - Vishay Siliconix |
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SIA459EDJ датащи(HTML) 2 Page - Vishay Siliconix |
2 / 10 page SiA459EDJ www.vishay.com Vishay Siliconix S13-2182-Rev. A, 14-Oct-13 2 Document Number: 62912 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 μA - 12 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 2.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 0.6 - 1.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 10 μA VDS = 0 V, VGS = ± 4.5 V ± 0.5 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5 A 0.0280 0.0350 VGS = - 3.7 V, ID = - 5 A 0.0310 0.0395 VGS = - 2.5 V, ID = - 2 A 0.0450 0.0620 Forward Transconductancea gfs VGS = - 10 V, ID = - 5 A 15 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 885 pF Output Capacitance Coss 155 Reverse Transfer Capacitance Crss 140 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 5 A 20 30 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 10 15 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd 2.9 Gate Resistance Rg f = 1 MHz 2.2 11 22 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.67 ID - 6 A, VGEN = - 4.5 V, Rg = 1 20 40 ns Rise Time tr 25 50 Turn-Off Delay Time td(off) 40 80 Fall Time tf 20 40 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.67 ID - 6 A, VGEN = - 10 V, Rg = 1 715 Rise Time tr 10 20 Turn-Off Delay Time td(off) 40 80 Fall Time tf 20 40 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 9 A Pulse Diode Forward Current ISM - 40 Body Diode Voltage VSD IS = - 6 A, VGS = 0 V - 0.9 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 6 A, dI/dt = 100 A/μs, TJ = 25 °C 21 35 ns Body Diode Reverse Recovery Charge Qrr 920 nC Reverse Recovery Fall Time ta 7 ns Reverse Recovery Rise Time tb 14 |
Аналогичный номер детали - SIA459EDJ |
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Аналогичное описание - SIA459EDJ |
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