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SIA459EDJ датащи(PDF) 2 Page - Vishay Siliconix

номер детали SIA459EDJ
подробное описание детали  P-Channel 20 V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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SiA459EDJ
www.vishay.com
Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13
2
Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 μA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 μA
- 12
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
2.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
- 0.6
- 1.2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 10
μA
VDS = 0 V, VGS = ± 4.5 V
± 0.5
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS  - 5 V, VGS = - 4.5 V
- 10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 5 A
0.0280
0.0350
VGS = - 3.7 V, ID = - 5 A
0.0310
0.0395
VGS = - 2.5 V, ID = - 2 A
0.0450
0.0620
Forward Transconductancea
gfs
VGS = - 10 V, ID = - 5 A
15
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
885
pF
Output Capacitance
Coss
155
Reverse Transfer Capacitance
Crss
140
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 5 A
20
30
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
10
15
Gate-Source Charge
Qgs
1.6
Gate-Drain Charge
Qgd
2.9
Gate Resistance
Rg
f = 1 MHz
2.2
11
22
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1.67 
ID  - 6 A, VGEN = - 4.5 V, Rg = 1 
20
40
ns
Rise Time
tr
25
50
Turn-Off Delay Time
td(off)
40
80
Fall Time
tf
20
40
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1.67 
ID  - 6 A, VGEN = - 10 V, Rg = 1 
715
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
40
80
Fall Time
tf
20
40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 9
A
Pulse Diode Forward Current
ISM
- 40
Body Diode Voltage
VSD
IS = - 6 A, VGS = 0 V
- 0.9
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 6 A, dI/dt = 100 A/μs,
TJ = 25 °C
21
35
ns
Body Diode Reverse Recovery Charge
Qrr
920
nC
Reverse Recovery Fall Time
ta
7
ns
Reverse Recovery Rise Time
tb
14


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