SIHP20N50E datasheet(4/9 Pages) VISHAY

номер детали	SIHP20N50E

подробное описание детали	E Series Power MOSFET

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SiHP20N50E

www.vishay.com

Vishay Siliconix

S15-0278-Rev. B, 23-Feb-15

4

Document Number: 91633

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Safe Operating Area

Fig. 10 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Temperature vs. Drain-to-Source Voltage

0

4

8

12

16

20

24

0

20406080

100

Q

g, Total Gate Charge (nC)

V

DS = 400 V

V

DS = 250 V

V

DS = 100 V

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

SD, Source-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

V

GS = 0 V

0.01

0.1

1

10

100

110

100

1000

V

DS, Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

I

DM Limited

T

C = 25 °C

T

J = 150 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

Operation in this Area

Limited by R

DS(on)

0

5

10

15

20

25

50

75

100

125

150

T

C, Case Temperature (°C)

475

500

525

550

575

600

625

650

- 60 - 40 - 20

0

20

40

60

80 100 120 140 160

T

J, Junction Temperature (°C)

I

D = 250 μA

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