STBP4410 datasheet(2/10 Pages) SAMHOP

номер детали	STBP4410

подробное описание детали	Super high dense cell design for extremely low RDS(ON).

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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2 / 10 page

4 Symbol

Min

Typ

Max

Units

BVDSS

100

V

1

IGSS

±100

nA

VGS(th)

2

V

7.0

gFS

74

S

VSD

CISS

3715

pF

COSS

515

pF

CRSS

315

pF

Qg

116

nC

147

nC

Qgs

113

nC

Qgd

37

tD(ON)

58

ns

tr

9.5

ns

tD(OFF)

26

ns

tf

ns

Gate-Drain Charge

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=50V

ID=1A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=50V,ID=25A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=37.5A

VDS=10V , ID=37.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=80V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

4

9.0

b

f=1.0MHz

b

VDS=50V,ID=25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=10A

0.77

1.3

V

Notes

STB4410

STP4410

www.samhop.com.tw

Dec,26,2014

2

3

Ver 1.0

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)

e.Mounted on FR4 Board of 1 inch2 ,2oz.

Аналогичный номер детали - STBP4410

производитель	номер детали	датащи	подробное описание детали
SamHop Microelectronics...	STBP440S	264Kb / 8P	Super high dense cell design for extremely low RDS(ON).

More results

Аналогичное описание - STBP4410

производитель	номер детали	датащи	подробное описание детали
SamHop Microelectronics...	STBP438S	267Kb / 8P	Super high dense cell design for extremely low RDS(ON)
	STBP438A	262Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP60L60	261Kb / 8P	Super high dense cell design for extremely low RDS(ON).
First Components Intern...	FMT2305	400Kb / 4P	Super High Dense Cell Design for Extremely Low RDS(ON)
SamHop Microelectronics...	STBP70L60	181Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP454	182Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP440S	264Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP432S	243Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STP35N10	139Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STP652F	126Kb / 7P	Super high dense cell design for extremely low RDS(ON).

More results

STBP4410 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

STBP4410 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

Аналогичный номер детали - STBP4410

Аналогичное описание - STBP4410

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