поискавой системы для электроныых деталей |
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STF8211 датащи(PDF) 1 Page - SamHop Microelectronics Corp. |
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STF8211 датащи(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page Suface Mount Package. S mHop Microelectronics C orp. a Symbol VDS VGS IDM 80 W A PD °C 1.56 -55 to 150 ID Units Parameter 20 8 48 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 20V 8A 20.0 @ VGS=2.5V 13.5 @ VGS=4.0V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous c -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.5 www.samhop.com.tw Jul,18,2014 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor STF8211 Green Product ESD Protected. G1 S1 S1 S1 T T D DF F N N 2 2X X 3 3 G2 S2 S2 D1/D2 (Bottom view) S1 G1 Bottom Drain Contact (D1/D2) 6.4 1.00 P P IIN N 1 1 G2 S2 S2 1 2 3 4 5 6 c |
Аналогичный номер детали - STF8211 |
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Аналогичное описание - STF8211 |
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