STM4800S datasheet(3/8 Pages) SAMHOP

номер детали	STM4800S

подробное описание детали	S uper high dense cell design for low R DS (ON).

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производитель	SAMHOP [SamHop Microelectronics Corp.]

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Parameter

Symbol

C ondition

Min Typ Max Unit

E LE C TR IC AL C HAR AC TE R IS TIC S (TA=25 C unless otherwise noted)

DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S

Diode Forward Voltage

VSD

VGS =0 V, Is =1.7A

1.2

V

b

Notes

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

F igure 2. Trans fer C haracteris tics

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

ID, Drain C urrent (A)

V GS , G ate-to-S ource Voltage (V )

3

S T M4800S

35

30

25

20

15

10

0

1.5

1.4

1.3

1.2

1.1

1.0

0

100

0.8

Tj( C )

75

25

50

T j, J unction T empera ture ( C )

F igure 1. Output C haracteris tics

V DS ,Drain-to-S ource Voltage (V )

F igure 3. On-R es is tance vs . Drain C urrent

and G ate V oltage

510

15

20

25

0

V GS =4.5V

V GS =10V

V GS =4.5V

ID=7A

125

V GS =10V

ID=8A

a.S urface Mounted on FR 4 Board, t <=10sec.

25

20

15

10

5

0

0.5

1

1.5

2

2.5

3

25 C

20

12

8

4

0

-55 C

125 C

0.8

4.8

4.0

3.2

2.4

1.6

VG S =3V

VG S =4.5V

VG S =2.5V

V GS =10V

V GS =3.5V

16

150

Аналогичный номер детали - STM4800S

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	STM4800S	1Mb / 9P	N-Channel 20V (D-S) MOSFET

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Аналогичное описание - STM4800S

производитель	номер детали	датащи	подробное описание детали
SamHop Microelectronics...	STS2306E	141Kb / 7P	S uper high dense cell design for low R DS (ON).
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STM4800S датащи(PDF) 3 Page - SamHop Microelectronics Corp.

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