2N3506 / 2N3507

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS CONTINUED (TA=25°C unless otherwise noted)

2N3506

2N3507

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

hFE

VCE=1.0V, IC=500mA

50

35

hFE

VCE=2.0V, IC=1.5A

40

200

30

150

hFE

VCE=3.0V, IC=2.5A

30

25

hFE

VCE=5.0V, IC=3.0A

25

20

fT

VCE=5.0V, IC=100mA, f=20MHz

60

60

MHz

Cob

VCB=10V, IE=0, f=100kHz

40

40

pF

Cib

VBE=3.0V, IC=0, f=100kHz

300

300

pF

td

VCC=30V, IC=1.5A, IB1=150mA

15

15

ns

tr

VCC=30V, IC=1.5A, IB1=150mA

30

30

ns

ts

VCC=30V, IC=1.5A, IB1=IB2=150mA

55

55

ns

tf

VCC=30V, IC=1.5A, IB1=IB2=150mA

35

35

ns

TO-39 PACKAGE - MECHANICAL OUTLINE

A

B

45°

D

E

C

F

J

I

LEAD #1

LEAD #2

LEAD #3

H

G

R1

MIN

MAX

MIN

MAX

A (DIA)

0.335

0.370

8.51

9.40

B (DIA)

0.315

0.335

8.00

8.51

C

-

0.040

-

1.02

D

0.240

0.260

6.10

6.60

E

0.500

-

12.70

-

F (DIA)

0.016

0.021

0.41

0.53

G (DIA)

H

I

0.028

0.034

0.71

0.86

J

0.029

0.045

0.74

1.14

TO-39 (REV: R1)

LEAD CODE:

1) Emitter

2) Base

3) Collector

0.200

0.100

5.08

2.54

DIMENSIONS

SYMBOL

INCHES

MILLIMETERS