2011. 9. 21

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SEMICONDUCTOR

TECHNICAL DATA

KF2N60D/I

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 1

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

FEATURES

・V

・R

・Qg(typ) = 6.0nC

MAXIMUM RATING (Tc=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current

2.0

A

1.2

Pulsed (Note1)

4.0

Single Pulsed Avalanche Energy

(Note 2)

60

mJ

Repetitive Avalanche Energy

(Note 1)

2.3

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

40.3

W

Derate above 25

℃

0.32

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

3.1

℃/W

Thermal Resistance, Junction-to-

Ambient

110

℃/W

G

D

S

PIN CONNECTION

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

O

0.1 MAX

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

1. GATE

2. DRAIN

3. SOURCE

IPAK(1)

123

A

A

B

C

C

D

E

F

FF

G

G

H

H

J

J

L

L

0.96 MAX

K

M

P

M

N

P

N

6.6 0.2

+

_

6.1 0.2

+

_

5.34 0.3

+

_

0.7 0.2

+

_

9.3 0.3

+

_

2.3 0.2

+

_

0.76 0.1

+

_

2.3 0.1

+

_

0.5 0.1

+

_

1.8

0.2

+

_

0.5

0.1

+

_

1.0

0.1

+

_

+

_

1.02

0.3

DIM

MILLIMETERS

1. GATE

2. DRAIN

3. SOURCE

(KF2N60D/I)

KF2N60D

KF2N60I