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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF40H210 датащи(PDF) 2 Page - International Rectifier |
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IRF40H210 датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF40H210 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 201 A ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 127 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V(Wire Bond Limited) 100 IDM Pulsed Drain Current 400* PD @TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 42 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 1.4 1.7 VGS = 10V, ID = 100A ––– 2.3 ––– VGS = 6.0V, ID = 50A VGS(th) Gate Threshold Voltage 2.2 ––– 3.7 V VDS = VGS, ID = 150µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 40 V, VGS = 0V ––– ––– 150 VDS = 40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.6 ––– m Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.030mH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1117A/µs, VDD V(BR)DSS, TJ 150°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 27A, VGS =10V. * Pulse drain current is limited by source bonding technology. Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 149 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 370 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 1.0 RJC (Top) Junction-to-Case ––– 18 °C/W RJA Junction-to-Ambient ––– 33 RJA (<10s) Junction-to-Ambient ––– 20 |
Аналогичный номер детали - IRF40H210 |
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Аналогичное описание - IRF40H210 |
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