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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7380PBF-1 датащи(PDF) 2 Page - International Rectifier |
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IRF7380PBF-1 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7380TRPbF-1 2 www.irf.com © 2014International Rectifier Submit Datasheet Feedback October 16, 2014 S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 61 73 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 4.3 ––– ––– S Qg Total Gate Charge ––– 15 23 Qgs Gate-to-Source Charge ––– 2.9 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 4.5 ––– td(on) Turn-On Delay Time ––– 9.0 ––– tr Rise Time ––– 10 ––– td(off) Turn-Off Delay Time ––– 41 ––– ns tf Fall Time ––– 17 ––– Ciss Input Capacitance ––– 660 ––– Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 15 ––– pF Coss Output Capacitance ––– 710 ––– Coss Output Capacitance ––– 72 ––– Coss eff. Effective Output Capacitance ––– 140 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.6 A (Body Diode) ISM Pulsed Source Current ––– ––– 29 A (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 50 ––– ns Qrr Reverse Recovery Charge ––– 110 ––– nC ton Forward Turn-On Time Intrinsicturn-on timeis negligible(turn-on is dominatedby LS+LD) 2.2 Typ. ––– ––– Conditions VDS = 25V, ID = 2.2A ID = 2.2A VDS = 40V MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V e VGS = 0V VDS = 25V ƒ = 1.0MHz 75 TJ = 25°C, IS = 2.2A, VGS = 0V e TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/μs e Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.2A e VDS = VGS, ID = 250μA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V g VGS = 10V e VDD = 40V ID = 2.2A RG = 24Ω |
Аналогичный номер детали - IRF7380PBF-1 |
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Аналогичное описание - IRF7380PBF-1 |
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