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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7478PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7478PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7478PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 4.2A Qg Total Gate Charge ––– 21 31 ID = 4.2A Qgs Gate-to-Source Charge ––– 4.3 ––– nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– 9.6 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 7.7 ––– VDD = 30V tr Rise Time ––– 2.6 ––– ID = 4.2A td(off) Turn-Off Delay Time ––– 44 ––– RG = 6.2Ω tf Fall Time ––– 13 ––– VGS = 10V Ciss Input Capacitance ––– 1740 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1590 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 220 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, VDS = 0V to 48V Dynamic @ TJ = 25°C (unless otherwise specified) ns S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.2A, VGS = 0V trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.2A Qrr Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs Diode Characteristics 2.3 56 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA ––– 20 26 VGS = 10V, ID = 4.2A ––– 23 30 VGS = 4.5V, ID = 3.5A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 48V, VGS = 0V ––– ––– 100 VDS = 48V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 140 mJ IAR Avalanche Current ––– 4.2 A |
Аналогичный номер детали - IRF7478PBF_15 |
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Аналогичное описание - IRF7478PBF_15 |
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