поискавой системы для электроныых деталей |
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IRF7488PBF датащи(PDF) 1 Page - International Rectifier |
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IRF7488PBF датащи(HTML) 1 Page - International Rectifier |
1 / 9 page Symbol Parameter Max. Units VDS Drain-Source Voltage 80 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.0 A IDM Pulsed Drain Current 50 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 Linear Derating Factor 20 mW/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) www.irf.com 1 09/21/04 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7488PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg 80V 29m W@VGS=10V 38nC Notes through are on page 9 PD - 95283 Absolute Maximum Ratings l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current |
Аналогичный номер детали - IRF7488PBF_15 |
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Аналогичное описание - IRF7488PBF_15 |
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