IRF7526D1PbF

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5

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJC

C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical On-Resistance Vs. Drain

Current

Fig 11. Typical On-Resistance Vs. Gate

Voltage

0.0

0.5

1.0

1.5

0123

4

A

VGS = -10V

VGS = -4.5V

D

-I , Drain Current (A)

0.10

0.20

0.30

0.40

0.50

0.60

3

6

9

12

15

A

I

= -2.0A

GS

-V

, Gate-to-Source Voltage (V)

Power Mosfet Characteristics