поискавой системы для электроныых деталей |
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IRF7820PBF датащи(PDF) 1 Page - International Rectifier |
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IRF7820PBF датащи(HTML) 1 Page - International Rectifier |
1 / 9 page 07/24/2012 www.irf.com 1 IRF7820PbF HEXFET® Power MOSFET Notes through
are on page 9 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 Benefits l Very Low RDS(on) at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS(on) max Qg (typ.) 200V 78m @VGS = 10V 29nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RJL Junction-to-Drain Lead g ––– 20 RJA Junction-to-Ambient f ––– 50 Max. 3.7 2.9 29 ± 20 200 °C/W A °C V -55 to + 150 2.5 0.02 1.6 |
Аналогичный номер детали - IRF7820PBF_15 |
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Аналогичное описание - IRF7820PBF_15 |
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