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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7842PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7842PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014 IRF7842PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.0 5.0 m Ω ––– 4.7 5.9 VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 81 ––– ––– S Qg Total Gate Charge ––– 33 50 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC Qgd Gate-to-Drain Charge ––– 10 ––– Qgodr Gate Charge Overdrive ––– 10.6 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 12.8 ––– Qoss Output Charge ––– 18 ––– nC RG Gate Resistance ––– 1.3 2.6 Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 12 ––– td(off) Turn-Off Delay Time ––– 21 ––– ns tf Fall Time ––– 5.0 ––– Ciss Input Capacitance ––– 4500 ––– Coss Output Capacitance ––– 680 ––– pF Crss Reverse Transfer Capacitance ––– 310 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.1 (Body Diode) A ISM Pulsed Source Current ––– ––– 140 (Body Diode)Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 99 150 ns Qrr Reverse Recovery Charge ––– 11 17 nC ––– ID = 14A VGS = 0V VDS = 20V VGS = 4.5V, ID = 14A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 250μA Clamped Inductive Load VDS = 20V, ID = 14A VDS = 32V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 32V, VGS = 0V TJ = 25°C, IF = 14A, VDD = 20V di/dt = 100A/μs e TJ = 25°C, IS = 14A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 17A e MOSFET symbol VDS = 16V, VGS = 0V VDD = 20V, VGS = 4.5V e ID = 14A VDS = 20V Conditions Max. 50 14 ƒ = 1.0MHz |
Аналогичный номер детали - IRF7842PBF |
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Аналогичное описание - IRF7842PBF |
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