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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7904PBF-1 датащи(PDF) 1 Page - International Rectifier |
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IRF7904PBF-1 датащи(HTML) 1 Page - International Rectifier |
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1 / 10 page  HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.6 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.1 8.9 A IDM Pulsed Drain Current c 61 89 PD @TA = 25°C Power Dissipation 1.4 2.0 W PD @TA = 70°C Power Dissipation 0.9 1.3 Linear Derating Factor 0.011 0.016 W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Q1 Max. Q2 Max. Units RθJL Junction-to-Drain Lead g 20 20 °C/W RθJA Junction-to-Ambient fg 90 62.5 ± 20 30 -55 to + 150 SO-8 S1 / D2 S1 / D2 D1 G1 G2 S2 S1 / D2 S2 1 2 3 4 8 7 6 5 IRF7904PbF-1 Features Benefits Industry-standard pinout SO-8 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability Form Quantity Tube/Bulk 95 IRF7904PbF-1 Tape and Reel 4000 IRF7904TRPbF-1 Package Type Standard Pack Orderable Part Number IRF7904PbF-1 SO-8 Base Part Number VDS 30 V RDS(on) max Q1 (@VGS = 10V) 16.2 RDS(on) max Q2 (@VGS = 10V) 10.8 Qg (typical) Q1 7.5 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 7.6 ID(@TA = 25°C)Q2 11 m Ω nC A 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 19, 2014 |
Аналогичный номер детали - IRF7904PBF-1_15 |
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Аналогичное описание - IRF7904PBF-1_15 |
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