BC846BWT1G datasheet(3/13 Pages) ONSEMI

номер детали	BC846BWT1G

подробное описание детали	General Purpose Transistors

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производитель	ONSEMI [ON Semiconductor]

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BC846, BC847, BC848

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BC846A, BC847A, BC848A

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0

100

200

300

0.1

0.01

0.001

0.0001

0

0.02

0.18

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

1

VCE = 1 V

150

°C

−55

°C

25

°C

IC/IB = 20

150

°C

−55

°C

25

°C

0.4

0.9

IC/IB = 20

150

°C

−55

°C

25

°C

0.4

0.7

1.1

VCE = 5 V

150

°C

−55

°C

25

°C

0.04

0.06

0.08

0.10

0.12

0.14

0.16

Figure 5. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0

100

200

300

1

VCE = 5 V

150

°C

−55

°C

25

°C

Аналогичный номер детали - BC846BWT1G

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BC846BWT1	207Kb / 6P	CASE 419-02, STYLE 3 SOT-323/SC-70
ON Semiconductor	BC846BWT1	147Kb / 6P	General Purpose Transistors(NPN Silicon)
Leshan Radio Company	BC846BWT1	185Kb / 4P	General Purpose Transistors(NPN Silicon)

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Аналогичное описание - BC846BWT1G

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ON Semiconductor	2N4403	106Kb / 7P	General Purpose Transistors March, 2007 ??Rev. 3
E-Tech Electronics LTD	BC846ALT1	194Kb / 4P	General Purpose Transistors
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WILLAS ELECTRONIC CORP	2SA812XLT1	351Kb / 5P	General Purpose Transistors
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