TIP127 datasheet(2/7 Pages) ONSEMI

номер детали	TIP127

подробное описание детали	Plastic Medium-Power Complementary Silicon Transistors

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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MAXIMUM RATINGS

Rating

Symbol

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

Unit

Collector−Emitter Voltage

VCEO

60

80

100

Vdc

Collector−Base Voltage

VCB

60

80

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

5.0

8.0

Adc

Base Current

IB

120

mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

65

0.52

W

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD

2.0

0.016

W

W/°C

Unclamped Inductive Load Energy (Note 1)

E

50

mJ

Operating and Storage Junction, Temperature Range

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.92

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP120, TIP125

(VCE = 40 Vdc, IB = 0)

TIP121, TIP126

(VCE = 50 Vdc, IB = 0)

TIP122, TIP127

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP120, TIP125

(VCB = 80 Vdc, IE = 0)

TIP121, TIP126

(VCB = 100 Vdc, IE = 0)

TIP122, TIP127

ICBO

−

0.2

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

1000

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

(IC = 5.0 Adc, IB = 20 mAdc)

VCE(sat)

−

2.0

4.0

Vdc

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)

VBE(on)

−

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

−

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

Cob

−

300

200

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

Аналогичный номер детали - TIP127

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP127	206Kb / 4P	POWER TRANSISTORS(5.0A,60-100V,65W)
New Jersey Semi-Conduct...	TIP127	100Kb / 2P	PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
Diotec Semiconductor	TIP127	110Kb / 2P	Si-Epitaxial Planar Darlington Power Transistors
Shenzhen Tuofeng Semico...	TIP127	4Mb / 2P	PNP Darlington Transistors
Weitron Technology	TIP127	768Kb / 3P	PNP/NPN Silicon Power Transistor

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Аналогичное описание - TIP127

производитель	номер детали	датащи	подробное описание детали
Boca Semiconductor Corp...	TIP110	153Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	152Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
Motorola, Inc	BDX53B	169Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors
New Jersey Semi-Conduct...	MJE2100	144Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP110	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
	BDX53B	115Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 15
	2N6040	114Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
	BDX53B	87Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors February, 2006 ??Rev. 12
New Jersey Semi-Conduct...	MJE1090	143Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP120	91Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 6

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