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VMMK-2503 датащи(PDF) 8 Page - AVAGO TECHNOLOGIES LIMITED |
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VMMK-2503 датащи(HTML) 8 Page - AVAGO TECHNOLOGIES LIMITED |
8 / 11 page 8 Figure 19. Usage of the VMMK-2503 Figure 20. Evaluation/Test Board (available to qualified customer request) VMMK-2503 Application and Usage (PleasealwaysrefertothelatestApplicationNoteAN5378inwebsite) Biasing and Operation The VMMK-2503 is normally biased with a positive drain supply connected to the output pin through an external bias-tee and with bypass capacitors as shown in Figure 19. The recommended drain supply voltage is 5 V and the corresponding drain current is approximately 65mA. The input of the VMMK-2503 is AC coupled and a DC-blocking capacitor is not required. Aspects of the amplifier perfor- mance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise ( Γopt) matching. Amp Bias-Tee Input Vdd Output Size: 1.1 mm x 0.6 mm (0402 component) 50 Ohm line 50 Ohm line 100 pF 0.1 uF Output Pad Ground Pad Input Pad Amp Input Vdd Output Output Pad Ground Pad Input Pad 50 Ohm line 50 Ohm line 100 pF 0.1 uF 10 nH 100 pF Size: 1.1 mm x 0.6 mm (0402 component) Figure 21. Example application of VMMK-2503 at 5.8GHz Biasing the device at 5V compared to 4V results in higher gain, higher IP3 and P1dB. In a typical application, the bias- tee can be constructed using lumped elements. The value of the output inductor can have a major effect on both low and high frequency operation. The demo board uses an 10nH inductor that has self resonant frequency higher than the maximum desired frequency of operation. At frequencies higher than 6GHz, it may be advantageous to use a quarter-wave long micro-strip line to act as a high- impedance at the desired frequency of operation. This technique proves a good solution but only over relatively narrow bandwidths. Another approach for broadbanding the VMMK-2503 is to series two different value inductors with the smaller value inductor placed closest to the device and favoring the higher frequencies. The larger value inductor will then offer better low frequency performance by not loading the output of the device. The parallel combination of the 100pF and 0.1uF capacitors provide a low impedance in the band of operation and at lower frequencies and should be placed as close as possible to the inductor. The low frequency bypass provides good rejection of power supply noise and also provides a low impedance termi- nation for third order low frequency mixing products that will be generated when multiple in-band signals are injected into any amplifier. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. S Parameter Measurements The S-parameters are measured on a .016 inch thick RO4003 printed circuit test board, using G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition from the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short - Open - Load - Thru) and TRL (Thru - Reflect - Line) calibration tech- niques are used to correct for the effects of the test board, resulting in accurate device S-parameters. The reference plane for the S Parameters is at the edge of the package. The product consistency distribution charts shown on page 2 represent data taken by the production wafer probe station using a 300um G-S wafer probe. The ground-signal probing that is used in production allows the device to be probed directly at the device with minimal common lead inductance to ground. Therefore there will be a slight dif- ference in the nominal gain obtained at the test frequency using the 300um G-S wafer probe versus the 300um G-S-G printed circuit board substrate method. |
Аналогичный номер детали - VMMK-2503_15 |
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Аналогичное описание - VMMK-2503_15 |
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