поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

VMMK-2503 датащи(PDF) 8 Page - AVAGO TECHNOLOGIES LIMITED

номер детали VMMK-2503
подробное описание детали  1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  AVAGO [AVAGO TECHNOLOGIES LIMITED]
домашняя страница  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

VMMK-2503 датащи(HTML) 8 Page - AVAGO TECHNOLOGIES LIMITED

Back Button VMMK-2503_15 Datasheet HTML 3Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 4Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 5Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 6Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 7Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 8Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 9Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 10Page - AVAGO TECHNOLOGIES LIMITED VMMK-2503_15 Datasheet HTML 11Page - AVAGO TECHNOLOGIES LIMITED  
Zoom Inzoom in Zoom Outzoom out
 8 / 11 page
background image
8
Figure 19. Usage of the VMMK-2503
Figure 20. Evaluation/Test Board (available to qualified customer request)
VMMK-2503 Application and Usage
(PleasealwaysrefertothelatestApplicationNoteAN5378inwebsite)
Biasing and Operation
The VMMK-2503 is normally biased with a positive drain
supply connected to the output pin through an external
bias-tee and with bypass capacitors as shown in Figure
19. The recommended drain supply voltage is 5 V and the
corresponding drain current is approximately 65mA. The
input of the VMMK-2503 is AC coupled and a DC-blocking
capacitor is not required. Aspects of the amplifier perfor-
mance may be improved over a narrower bandwidth by
application of additional conjugate, linearity, or low noise
(
Γopt) matching.
Amp
Bias-Tee
Input
Vdd
Output
Size: 1.1 mm x 0.6 mm (0402 component)
50 Ohm line
50 Ohm line
100 pF
0.1 uF
Output
Pad
Ground
Pad
Input
Pad
Amp
Input
Vdd
Output
Output
Pad
Ground
Pad
Input
Pad
50 Ohm line
50 Ohm line
100 pF
0.1 uF
10 nH
100 pF
Size: 1.1 mm x 0.6 mm (0402 component)
Figure 21. Example application of VMMK-2503 at 5.8GHz
Biasing the device at 5V compared to 4V results in higher
gain, higher IP3 and P1dB. In a typical application, the bias-
tee can be constructed using lumped elements. The value
of the output inductor can have a major effect on both
low and high frequency operation. The demo board uses
an 10nH inductor that has self resonant frequency higher
than the maximum desired frequency of operation. At
frequencies higher than 6GHz, it may be advantageous to
use a quarter-wave long micro-strip line to act as a high-
impedance at the desired frequency of operation. This
technique proves a good solution but only over relatively
narrow bandwidths.
Another approach for broadbanding the VMMK-2503 is
to series two different value inductors with the smaller
value inductor placed closest to the device and favoring
the higher frequencies. The larger value inductor will then
offer better low frequency performance by not loading
the output of the device. The parallel combination of the
100pF and 0.1uF capacitors provide a low impedance
in the band of operation and at lower frequencies and
should be placed as close as possible to the inductor. The
low frequency bypass provides good rejection of power
supply noise and also provides a low impedance termi-
nation for third order low frequency mixing products
that will be generated when multiple in-band signals are
injected into any amplifier.
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
S Parameter Measurements
The S-parameters are measured on a .016 inch thick
RO4003 printed circuit test board, using G-S-G (ground
signal ground) probes. Coplanar waveguide is used to
provide a smooth transition from the probes to the device
under test. The presence of the ground plane on top of
the test board results in excellent grounding at the device
under test. A combination of SOLT (Short - Open - Load
- Thru) and TRL (Thru - Reflect - Line) calibration tech-
niques are used to correct for the effects of the test board,
resulting in accurate device S-parameters. The reference
plane for the S Parameters is at the edge of the package.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight dif-
ference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.


Аналогичный номер детали - VMMK-2503_15

производительномер деталидатащиподробное описание детали
logo
AVAGO TECHNOLOGIES LIMI...
VMMK-2503-BLKG AVAGO-VMMK-2503-BLKG Datasheet
235Kb / 11P
   1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
VMMK-2503-TR1G AVAGO-VMMK-2503-TR1G Datasheet
235Kb / 11P
   1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
More results

Аналогичное описание - VMMK-2503_15

производительномер деталидатащиподробное описание детали
logo
Broadcom Corporation.
VMMK-2503 BOARDCOM-VMMK-2503 Datasheet
840Kb / 11P
   1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
logo
AVAGO TECHNOLOGIES LIMI...
VMMK-2503 AVAGO-VMMK-2503 Datasheet
235Kb / 11P
   1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
logo
Broadcom Corporation.
DEMO-VMMK-2X03 BOARDCOM-DEMO-VMMK-2X03 Datasheet
831Kb / 11P
   0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
logo
AVAGO TECHNOLOGIES LIMI...
VMMK-2203 AVAGO-VMMK-2203 Datasheet
831Kb / 11P
   0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
logo
Broadcom Corporation.
VMMK-2203 BOARDCOM-VMMK-2203 Datasheet
831Kb / 11P
   0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
logo
AVAGO TECHNOLOGIES LIMI...
VMMK-2403 AVAGO-VMMK-2403 Datasheet
768Kb / 11P
   2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
logo
Broadcom Corporation.
VMMK-2403 BOARDCOM-VMMK-2403 Datasheet
819Kb / 11P
   2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
VMMK-2103 BOARDCOM-VMMK-2103 Datasheet
853Kb / 12P
   0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package
logo
AVAGO TECHNOLOGIES LIMI...
VMMK-2103 AVAGO-VMMK-2103_15 Datasheet
853Kb / 12P
   0.5 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package
logo
NXP Semiconductors
BGA3012 PHILIPS-BGA3012 Datasheet
151Kb / 15P
   1 GHz 12 dB gain wideband amplifier MMIC
Rev. 3-26 September 2013
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com