поискавой системы для электроныых деталей |
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74ALVC_ALVCH16245 датащи(PDF) 10 Page - NXP Semiconductors |
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74ALVC_ALVCH16245 датащи(HTML) 10 Page - NXP Semiconductors |
10 / 17 page 9397 750 13117 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 03 — 12 May 2004 10 of 17 Philips Semiconductors 74ALVC16245; 74ALVCH16245 16-bit bus transceiver with direction pin; 3-state 11. Dynamic characteristics [1] All typical values are measured at Tamb =25 °C. [2] Typical values are measured at VCC = 2.5 V. [3] Typical values are measured at VCC = 3.3 V. [4] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N+ ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (C L × VCC 2 × f o) = sum of outputs. [5] The condition is VI = GND to VCC. Table 8: Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); test circuit Figure 8. Symbol Parameter Conditions Min Typ Max Unit Tamb = −40 °C to +85 °C [1] tPHL, tPLH propagation delay nAn to nBn; nBn to nAn see Figure 6 VCC = 2.3 V to 2.7 V [2] 1.0 2.0 3.7 ns VCC = 3.0 V to 3.6 V [3] 1.0 1.9 3.0 ns VCC = 2.7 V 1.0 2.1 3.6 ns tPZH, tPZL 3-state output enable time nOE to nAn; nOE to nBn see Figure 7 VCC = 2.3 V to 2.7 V [2] 1.0 2.7 5.7 ns VCC = 3.0 V to 3.6 V [3] 1.0 2.3 4.4 ns VCC = 2.7 V 1.0 3.0 5.4 ns tPHZ, tPLZ 3-state output disable time nOE to nAn; nOE to nBn see Figure 7 VCC = 2.3 V to 2.7 V [2] 1.0 2.2 5.2 ns VCC = 3.0 V to 3.6 V [3] 1.0 2.8 4.1 ns VCC = 2.7 V 1.0 3.1 4.6 ns CPD power dissipation capacitance per buffer outputs enabled [4] [5] -29 - pF outputs disabled [4] [5] -5 -pF |
Аналогичный номер детали - 74ALVC_ALVCH16245_15 |
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Аналогичное описание - 74ALVC_ALVCH16245_15 |
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