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IRLMS1503PBF датащи(PDF) 2 Page - International Rectifier |
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IRLMS1503PBF датащи(HTML) 2 Page - International Rectifier |
2 / 8 page IRLMS1503PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.037 V/°C Reference to 25°C, ID = 1mA 0.100 VGS = 10V, ID = 2.2A 0.20 VGS = 4.5V, ID = 1.1A VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.1 S VDS = 10V, ID = 1.1A 1.0 VDS = 24V, VGS = 0V 25 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 6.4 9.6 ID = 2.2A Qgs Gate-to-Source Charge 1.1 1.7 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge 1.9 2.8 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time 4.6 VDD = 15V tr Rise Time 4.4 ID = 2.2A td(off) Turn-Off Delay Time 10 RG = 6.0Ω tf Fall Time 2.0 RD = 6.7Ω, See Fig. 10 Ciss Input Capacitance 210 VGS = 0V Coss Output Capacitance 90 pF VDS = 25V Crss Reverse Transfer Capacitance 32 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.2V TJ = 25°C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time 36 54 ns TJ = 25°C, IF = 2.2A Qrr Reverse RecoveryCharge 39 58 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 18 1.7 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Surface mounted on FR-4 board, t ≤ 5sec. |
Аналогичный номер детали - IRLMS1503PBF |
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Аналогичное описание - IRLMS1503PBF |
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