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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF5M3415 датащи(PDF) 1 Page - International Rectifier |
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IRF5M3415 датащи(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 35 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 22 IDM Pulsed Drain Current ➀ 140 PD @ TC = 25°C Max. Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 290 mJ IAR Avalanche Current ➀ 22 A EAR Repetitive Avalanche Energy ➀ 12.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 2.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 9.3 (Typical) g oC A 10/01/01 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF5M3415 150V 0.049 Ω 35A For footnotes refer to the last page HEXFET® POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight TO-254AA PD - 94286A |
Аналогичный номер детали - IRF5M3415_15 |
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Аналогичное описание - IRF5M3415_15 |
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