2SA1073_15 datasheet(2/3 Pages) JMNIC

номер детали	2SA1073

подробное описание детали	Silicon PNP Power Transistors

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производитель	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

2

Silicon PNP Power Transistors

2SA1072 2SA1073

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SA1072

-120

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1073

IC=-1mA ;RBE=∞

-160

V

2SA1072

-120

V(BR)CBO

Collector-base

breakdown voltage

2SA1073

IC=-50μA ;IE=0

-160

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-50μA ;IC=0

-7

V

VCEsat

Collector-emitter saturation voltage

IC=-5A ;IB=-0.5A

-0.9

-1.8

V

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

-1.25

-1.7

V

2SA1072

VCB=-120V; IE=0

ICBO

Collector

cut-off current

2SA1073

VCB=-160V; IE=0

-50

μA

2SA1072

VCE=-120V; RBE=∞

ICEO

Collector

cut-off current

2SA1073

VCE=-160V; RBE=∞

-1

mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-50

μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

60

200

hFE-2

DC current gain

IC=-7A ; VCE=-5V

40

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

300

pF

fT

Transition frequency

IC=-1A ; VCE=-10V;f=10MHz

60

MHz

Switching times

tr

Rise time

0.15

μs

tstg

Storage time

0.50

μs

tf

Fall time

IC=-7.5A

IB1=-IB2=-0.75A;RL=4Ω

0.11

μs

Аналогичный номер детали - 2SA1073_15

производитель	номер детали	датащи	подробное описание детали
Fujitsu Component Limit...	2SA1073	210Kb / 1P	SILICON HIGH SPEED POWER TRANSISTOR
Inchange Semiconductor ...	2SA1073	168Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	2SA1073	120Kb / 3P	Silicon PNP Power Transistors
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Quanzhou Jinmei Electro...	2SA1073	162Kb / 3P	Silicon PNP Power Transistors

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Аналогичное описание - 2SA1073_15

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Boca Semiconductor Corp...	2N3789	124Kb / 3P	SILICON PNP POWER TRANSISTORS
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Аналогичный номер детали - 2SA1073_15

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