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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MTBB0P10AJ3 датащи(PDF) 2 Page - Cystech Electonics Corp. |
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MTBB0P10AJ3 датащи(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C163J3 Issued Date : 2015.05.29 Revised Date : Page No. : 2/9 MTBB0P10AJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ± 30 V Continuous Drain Current @ TC=25 °C ID -10 Continuous Drain Current @ TC=100 °C ID -6.3 Pulsed Drain Current *1 IDM -40 Avalanche Current IAS -10 A Avalanche Energy @ L=0.5mH, ID=-10A, RG=25Ω EAS 25 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 5 mJ Total Power Dissipation @TC=25℃ 50 Total Power Dissipation @TC=100℃ Pd 20 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - VGS=0V, ID=-250μA VGS(th) -2 - -4 V VDS =VGS, ID=-250μA IGSS - - ± 100 nA VGS=±30V, VDS=0V - - -1 VDS =-100V, VGS =0V IDSS - - -25 μA VDS =-100V, VGS =0V, TJ=125 °C - 280 336 VGS =-10V, ID=-4.7A RDS(ON) *1 - 298 360 mΩ VGS =-6V, ID=-1A GFS *1 - 5.5 - S VDS =-10V, ID=-4.7A Dynamic Qg *1, 2 - 11.1 - Qgs *1, 2 - 3 - Qgd *1, 2 - 3.1 - nC ID=-1.5A, VDS=-80V, VGS=-10V td(ON) *1, 2 - 9.4 - tr *1, 2 - 17.2 - td(OFF) *1, 2 - 28.8 - tf *1, 2 - 33.2 - ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω Ciss - 551 - Coss - 54 - Crss - 26 - pF VGS=0V, VDS=-25V, f=1MHz |
Аналогичный номер детали - MTBB0P10AJ3 |
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Аналогичное описание - MTBB0P10AJ3 |
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