CSD13383F4_15 datasheet(5/15 Pages) TI

номер детали	CSD13383F4

подробное описание детали	CSD13383F4 12 V N-Channel FemtoFET MOSFET

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TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

D008

VGS = 2.5 V

VGS = 4.5 V

VSD - Source-to-Drain Voltage (V)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.0001

0.001

0.01

0.1

1

10

D009

TC = 25°C

TC = 125°C

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.4

0.55

0.7

0.85

1

1.15

1.3

1.45

D006

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

20

30

40

50

60

70

80

90

D007

TC = 25°C, I D = 0.5 A

TC = 125°C, I D = 0.5 A

Qg - Gate Charge (nC)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

2.5

0

1

2

3

4

5

D004

VDS - Drain-to-Source Voltage (V)

0

2

4

6

8

10

12

10

100

1000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

CSD13383F4

www.ti.com

SLPS517 – DECEMBER 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 0.5 A

VDS = 6 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 0.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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