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CSD17575Q3 датащи(PDF) 5 Page - Texas Instruments

номер детали CSD17575Q3
подробное описание детали  CSD17575Q3 30-V N-Channel NexFET Power MOSFET
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD17575Q3 датащи(HTML) 5 Page - Texas Instruments

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0.4
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−75
−50
−25
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TC - Case Temperature (ºC)
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 25A
TC = 125°C,I D = 25A
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Qg - Gate Charge (nC)
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
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VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =6V
VGS =4.5V
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
G001
CSD17575Q3
www.ti.com
SLPS489A – JUNE 2014 – REVISED AUGUST 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = 25 A
VDS = 15 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2014, Texas Instruments Incorporated
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