2000 Jan 05

2

Philips Semiconductors

Product specification

N-channel junction FET

BF862

FEATURES

• High transition frequency for excellent sensitivity in

AM car radios

• High transfer admittance.

APPLICATIONS

• Pre-amplifiers in AM car radios.

DESCRIPTION

Silicon N-channel symmetrical junction field-effect

transistor in a SOT23 package. Drain and source are

interchangeable.

PINNING SOT23

PIN

DESCRIPTION

1

source

2

drain

3

gate

handbook, halfpage

s

d

g

21

3

MAM036

Top view

Fig.1 Simplified outline and symbol.

Marking code: 2Ap.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

20

V

gate-source cut-off voltage

−0.3

−0.8

−1.2

V

drain-source current

10

−

25

mA

total power dissipation

−−

300

mW

y

transfer admittance

35

45

−

mS

junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.