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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BF904WR датащи(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF904WR датащи(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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5 / 12 page  1995 Apr 25 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR Fig.3 Forward transfer admittance as a function of junction temperature; typical values. 50 0 50 150 30 0 MLD268 100 T ( C) o j Yfs (mS) 40 20 10 Fig.4 Typical gain reduction as a function of AGC voltage. f = 50 MHz. Tj =25 °C. handbook, halfpage 0 10 20 30 40 50 01234 V (V) AGC gain reduction (dB) MRA769 Fig.5 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.19. VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb =25 °C; RG1 = 120 kΩ. handbook, halfpage 80 90 100 110 120 0 1020 304050 Vunw (dB V) gain reduction (dB) MRA771 µ Fig.6 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. 0 20 10 15 5 0 0.4 2.0 MLD270 0.8 1.2 1.6 I D (mA) V (V) G1 S 2 V 1.5 V 1 V V = 4 V 3 V 2.5 V G2 S |
Аналогичный номер детали - BF904WR_15 |
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Аналогичное описание - BF904WR_15 |
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