поискавой системы для электроныых деталей |
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BF1102 датащи(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1102 датащи(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 16 page 2000 Apr 11 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES • Two low noise gain controlled amplifiers in a single package • Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package. PINNING - SOT363 PIN DESCRIPTION BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) handbook, halfpage MBL029 AMP1 d (1) g1 (1) d (2) g1 (2) AMP2 g2 (1, 2) s (1, 2) 13 2 4 5 6 Fig.1 Simplified outline and symbol. BF1102 marking code: W1. BF1102R marking code: W2-. QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the source lead. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified VDS drain-source voltage −− 7V ID drain current (DC) −− 40 mA Ptot total power dissipation Ts ≤ 102 °C; note 1 −− 200 mW yfs forward transfer admittance ID =15mA 36 43 − mS Cig1-s input capacitance at gate 1 ID =15mA − 2.8 3.6 pF Crss reverse transfer capacitance f = 1 MHz − 30 50 fF F noise figure f = 800 MHz − 2 2.8 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 −− dB µV Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. |
Аналогичный номер детали - BF1102_15 |
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Аналогичное описание - BF1102_15 |
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