поискавой системы для электроныых деталей |
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BF1205C датащи(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1205C датащи(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 22 page BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 15 August 2006 3 of 22 Philips Semiconductors BF1205C Dual N-channel dual gate MOS-FET 3. Ordering information 4. Marking [1] * = p or -: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. 6. Thermal characteristics Table 3. Ordering information Type number Package Name Description Version BF1205C - plastic surface mounted package; 6 leads SOT363 Table 4. Marking Type number Marking code[1] BF1205C M6* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOS-FET VDS drain-source voltage - 6 V ID drain current (DC) - 30 mA IG1 gate 1 current - ±10 mA IG2 gate 2 current - ±10 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-s) thermal resistance from junction to soldering point 240 K/W |
Аналогичный номер детали - BF1205C_15 |
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Аналогичное описание - BF1205C_15 |
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