UNISONIC TECHNOLOGIES CO., LTD

BD238

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R226-002.C



°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-100

V

Collector-Emitter Voltage

-80

V

Emitter-Base Voltage

-5

V

Collector Current

-2

A

Collector Power Dissipation

1.25

W

Junction Temperature

150

°C

Storage Temperature

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

-100

V

Collector-Emitter Breakdown Voltage

-80

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-100

µA

Emitter Cut-Off Current

-1

mA

40

DC Current Gain

25

Collector-Emitter Saturation Voltage

-0.6

V

Transition Frequency

f=10MHz

3

MHz