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2SC3669G-X-AB3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2SC3669G-X-AB3-R
подробное описание детали  POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC3669G-X-AB3-R датащи(HTML) 2 Page - Unisonic Technologies

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2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-015.D
PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
2
A
Base Current
IB
1
A
Collector Power Dissipation
SOT-223/SOT-89
PC
0.5
W
TO-251/TO-252
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Emitter Breakdown Voltage
V(BR)CEO
IC= 10mA, IB= 0
80
V
Collector Cut-Off Current
ICBO
VCB=80V, IE= 0
1.0
μA
Emitter Cut-Off Current
IEBO
VEB= 5V, IC=0
1.0
μA
DC Current Gain
hFE1
VCE=2V, IC=0.5A
70
240
hFE2
VCE=2V, IC=1.5A
40
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=0.05A
0.15
0.5
V
Base- Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=0.05A
0.9
1.2
V
Transition Frequency
fT
VCE=2V, IC=0.5A
100
MHz
Collector Output Capacitance
Cob
VCB= 10V, IE= 0, f=1MHz
30
pF
Switching Time
Turn-on Time
tON
IB1= -IB2=0.05A
DUTY CYCLE ≤ 1%
0.2
μs
Storage Time
TSTG
1.0
μs
Fall Time
tf
0.2
μs
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70~140
120~240


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