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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TC649 датащи(PDF) 3 Page - Microchip Technology |
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TC649 датащи(HTML) 3 Page - Microchip Technology |
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3 / 28 page  2002 Microchip Technology Inc. DS21449C-page 3 TC649 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage ......................................................... 6V Input Voltage, Any Pin.... (GND – 0.3V) to (VDD +0.3V) Package Thermal Resistance: PDIP (RθJA) ............................................125°C/W SOIC (RθJA)............................................155°C/W MSOP (RθJA) ..........................................200°C/W Specified Temperature Range ........... -40°C to +125°C Storage Temperature Range.............. -65°C to +150°C *Stresses above those listed under "Absolute Maximum Rat- ings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Expo- sure to absolute maximum rating conditions for extended peri- ods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, TMIN ≤ TA ≤ TMAX, VDD = 3.0V to 5.5V. Symbol Parameter Min Typ Max Units Test Conditions VDD Supply Voltage 3.0 — 5.5 V IDD Supply Current, Operating — 0.5 1.0 mA Pins 6, 7 Open, CF = 1 µF, VIN = VC(MAX) IDD(SHDN) Supply Current, Shutdown/ Auto-shutdown Mode — 25 — µA Pins 6, 7 Open; Note 1 CF =1 µF, VIN = 0.35V IIN VIN, VAS Input Leakage -1.0 — +1.0 µA VOUT Output tR VOUT Rise Time — — 50 µsec IOH = 5 mA, Note 1 tF VOUT Fall Time — — 50 µsec IOL = 1 mA, Note 1 tSHDN Pulse Width (On VIN) to Clear Fault Mode 30 — — µsec VSHDN, VHYST Specifications, Note 1 IOL Sink Current at VOUT Output 1.0 — — mA VOL = 10% of VDD IOH Source Current at VOUT Output 5.0 — — mA VOH = 80% of VDD SENSE Input VTH(SENSE) SENSE Input threshold Voltage with Respect to GND 50 70 90 mV Note 1 FAULT Output VOL Output Low Voltage — — 0.3 V IOL = 2.5 mA tMP Missing Pulse Detector Timer — 32/F — Sec CF = 1.0 µF tSTART Start-up Timer — 32/F — Sec CF = 1.0 µF tDIAG Diagnostic Timer — 3/F — Sec CF = 1.0 µF VIN, VAS Inputs VC(MAX) Voltage at VIN for 100% Duty Cycle 2.5 2.65 2.8 V VC(SPAN) VC(MAX) - VC(MIN) 1.3 1.4 1.5 V VAS Auto-shutdown Threshold VC(MAX) -VC(SPAN) —VC(MAX) V VSHDN Voltage applied to VIN to Release Reset/Shutdown —— VDD x 0.13 V VREL Voltage applied to VIN to Release Reset Mode VDD x 0.19 — — V VDD = 5V, See Figure 5-11 VHYST Hysteresis on VSHDN, VREL —0.01 x VDD —V VHAS Hysteresis on Auto-shutdown Comparator —70 — mV Pulse Width Modulator FOSC PWM Frequency 26 30 34 Hz CF = 1.0 µF Note 1: Ensured by design, not tested. |
Аналогичный номер детали - TC649 |
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Аналогичное описание - TC649 |
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