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1N70L-TMA-T датащи(PDF) 3 Page - Unisonic Technologies

номер детали 1N70L-TMA-T
подробное описание детали  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N70L-TMA-T датащи(HTML) 3 Page - Unisonic Technologies

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1N70
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-171.E
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30V, VDS = 0V
100
nA
Reverse
VGS = -30V, VDS = 0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS
/TJ ID = 250μA
0.4
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.6A
9.3 13.5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
190 220
pF
Output Capacitance
COSS
25
35
pF
Reverse Transfer Capacitance
CRSS
20
25
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
(Note 2,3)
33
45
ns
Turn-On Rise Time
tR
45
60
ns
Turn-Off Delay Time
tD(OFF)
62
80
ns
Turn-Off Fall Time
tF
31
45
ns
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
(Note 2,3)
12
18
nC
Gate-Source Charge
QGS
3.5
nC
Gate-Drain Charge
QGD
2.2
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS = 1.2A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature


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