поискавой системы для электроныых деталей |
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6N70G-TMS4-T датащи(PDF) 8 Page - Unisonic Technologies |
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6N70G-TMS4-T датащи(HTML) 8 Page - Unisonic Technologies |
8 / 8 page 6N70-P Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 8 of 8 www.unisonic.com.tw QW-R502-968.E TYPICAL CHARACTERISTICS(C -100 Junction Temperature, TJ (°C) -50 50 200 ID=250μA 100 150 1.2 Breakdown Voltage vs. Temperature 0 1.1 1.0 0.9 0.8 -100 Junction Temperature, TJ (°C) -50 50 200 VGS=10V ID=3.0A 100 150 3.0 On-Resistance vs. Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
Аналогичный номер детали - 6N70G-TMS4-T |
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Аналогичное описание - 6N70G-TMS4-T |
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