1N50K-TA

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-048.b



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

1

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-State Resistance

5

6

Ω

DYNAMIC PARAMETERS

Input Capacitance

180

pF

Output Capacitance

30

pF

Reverse Transfer Capacitance

12.5

pF

SWITCHING PARAMETERS

Total Gate Charge

11

15

nC

Gate to Source Charge

2.5

nC

Gate to Drain Charge

(Note 1, 2)

1

nC

Turn-ON Delay Time

37.5

ns

Rise Time

20

ns

Turn-OFF Delay Time

53

ns

Fall-Time

(Note 1, 2)

12

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

1.3

A

Maximum Body-Diode Pulsed Current

5.2

A

Drain-Source Diode Forward Voltage

1.2

V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.