поискавой системы для электроныых деталей |
|
SI4164DY датащи(PDF) 2 Page - Vishay Telefunken |
|
SI4164DY датащи(HTML) 2 Page - Vishay Telefunken |
2 / 10 page www.vishay.com 2 Document Number: 68870 S-82015-Rev. A, 01-Sep-08 Vishay Siliconix Si4164DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 27 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0026 0.0032 Ω VGS = 4.5 V, ID = 10 A 0.0032 0.0039 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 75 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3545 pF Output Capacitance Coss 650 Reverse Transfer Capacitance Crss 240 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 62 95 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 26.5 40 Gate-Source Charge Qgs 8.5 Gate-Drain Charge Qgd 7.3 Gate Resistance Rg f = 1 MHz 0.2 1.1 2.2 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 35 60 ns Rise Time tr 16 30 Turn-Off Delay Time td(off) 48 85 Fall Time tf 16 30 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 18 35 Rise Time tr 816 Turn-Off Delay Time td(off) 41 75 Fall Time tf 818 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.4 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 3 A 0.72 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 33 65 ns Body Diode Reverse Recovery Charge Qrr 27 54 nC Reverse Recovery Fall Time ta 17 ns Reverse Recovery Rise Time tb 16 |
Аналогичный номер детали - SI4164DY |
|
Аналогичное описание - SI4164DY |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |