SI3932DV datasheet(1/11 Pages) TFUNK

номер детали	SI3932DV

подробное описание детали	Dual N-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

Si3932DV

New Product

Document Number: 65736

S10-0642-Rev. A, 22-Mar-10

www.vishay.com

1

Dual N-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.058 at VGS = 10 V

3.7

1.8 nC

0.073 at VGS = 4.5 V

3.3

Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

Marking Code

MH

XXX

Lot Traceability

and Date Code

Part # Code

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 150 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

3.7

A

TC = 70 °C

3

TA = 25 °C

3.4b, c

TA = 70 °C

2.7b, c

Pulsed Drain Current

IDM

15

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.17

TA = 25 °C

0.95b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.4

W

TC = 70 °C

0.9

TA = 25 °C

1.14b, c

TA = 70 °C

0.73b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

93

110

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

75

90

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Applications

•

DC/DC Converters

Аналогичный номер детали - SI3932DV

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3932DV	131Kb / 7P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 22-Mar-10
	SI3932DV	254Kb / 11P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI3932DV-T1-GE3	131Kb / 7P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 22-Mar-10
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Аналогичное описание - SI3932DV

производитель	номер детали	датащи	подробное описание детали
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