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SI4620DY датащи(PDF) 2 Page - Vishay Telefunken

номер детали SI4620DY
подробное описание детали  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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производитель  TFUNK [Vishay Telefunken]
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Document Number: 73862
S09-1341-Rev. D, 13-Jul-09
Vishay Siliconix
Si4620DY
Notes:
a. Surface Mounted on FR4 board.
b. t
≤ 10 s.
c. Maximum under Steady State conditions for MOSFETS is 110 °C/W.
d. Maximum under Steady State conditions for Schottky is 115 °C/W.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)a, c
RthJA
53
62.5
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
RthJF
30
40
Maximum Junction-to-Ambient (Schottky)
RthJA
55
65
Maximum Junction-to-Foot (Drain) (Schottky)
RthJF
32
42
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
32.5
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 5.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.2
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6 A
0.028
0.035
Ω
VGS = 4.5 V, ID = 4.9 A
0.041
0.052
Forward Transconductancea
gfs
VDS = 15 V, ID = 6 A
12
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
520
1040
pF
Output Capacitance
Coss
115
230
Reverse Transfer Capacitance
Crss
55
110
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 6 A
8.6
13
nC
VDS = 15 V, VGS = 4.5 V, ID = 6 A
4.2
6.5
Gate-Source Charge
Qgs
1.8
Gate-Drain Charge
Qgd
1.5
Gate Resistance
Rg
f = 1 MHz
2.8
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 3.1 Ω
ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 6 Ω
16
30
ns
Rise Time
tr
36
54
Turn-Off Delay Time
td(off)
21
40
Fall Time
tf
17
40


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