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1N4454UR-1 датащи(PDF) 1 Page - Microsemi Corporation |
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1N4454UR-1 датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 1 page Features Six sigma quality Metallurgically bonded BKC's Sigma Bond™ plating for problem free solderability Also comes in DO-35 glass package Full UR approval to Mil-S-19500 /144 Available up to JANTXV levels "S" level screening available to Source Control Drawings Applications Used in general purpose applications, where performance, space and switching speed are important. 1N4454UR-1 MINI-MELF-SMD Silicon Switching Diode 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Maximum Ratings Symbol Value Unit Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC PIV 75 (Min.) Volts Average Rectified Current I Avg 200 mAmps Continuous Forward Current I Fdc 300 mAmps Peak Surge Current (t peak = 1 sec.) I peak 1.0 Amp Power Dissipation T L= 50 oC, L = 3/8" from body P tot 500 mWatts Operating Temperature Range T Op 200 o C Storage Temperature Range T St -65 to +200 o C Electrical Characteristics @ 25 oC* Symbol Limits Unit Forward Voltage @ I F= 10 mA V F 1.0(max) Volts Breakdown Voltage @ I R = 10 mA PIV 75 (min) Volts Reverse Leakage Current @ V R = 50 V I R 0.1 (max) µA Reverse Leakage Current @ V R = 50 V, T=150 o C I R 100 (max) µA Capacitance @ V R = 0 V, f = 1mHz C T 2.0 (max) pF Reverse Recovery Time (note 1)/(note 2) t rr 2.0/4.0 (max) nSecs Forward Recovery Voltage (note 3) V fr 3.0 (max) Volts Note 1: Per Method 4031-A with I F = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. Note 2: Per Method 4031-A with I F = 10 mA, R L = 100 Ohms, Vr = 6 V, Recover to 1.0 mA. Note 3: Per Method 4026 with I F = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe- tition Rate = 5 - 100 KHz. *Unless Otherwise Specified Dia. .063-.067" 1.6-1.7mm 0.10"REF 2.54 mmREF Length 0.13-0.146" 3.30-3.70 mm Both End Caps 0.016-.022" 0.41-0.55 mm LL-34/35 MINI MELF Surface Mount Package DO-213AA |
Аналогичный номер детали - 1N4454UR-1 |
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Аналогичное описание - 1N4454UR-1 |
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