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2N3583 датащи(PDF) 1 Page - Microsemi Corporation |
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2N3583 датащи(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC1055.PDF 05-19-99 2N3583 ABSOLUTE MAXIMUM RATINGS: ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS VCBO* Collector-Base Voltage 250 Volts VCEO* Collector-Emitter Voltage 175 Volts VCER* Collector-Emitter Voltage RBE = 50Ω Ω 250 Volts VEBO* Emitter-Base Voltage 6 Volts IC* Peak Collector Current 5 Amps IC* Continuous Collector Current 1 Amps IB* Base Current 1 Amps TSTG* Storage Temperature -65 to 200 °°C TJ* Operating Junction Temperature -65 to 200 °°C * Lead Temperature 1/16" from Case for 10 Sec. 235 °°C PT* θθ JC Power Dissipation TC = 25°°C Thermal Impedance 35 5.0 Watts °°C/W 5 Amp, 250V, High Voltage NPN Silicon Power Transistors TO-66 APPLICATIONS: • Off-Line Inverters • Deflection Circuits • Switching Regulators • DC-DC Converters • Motor Controls • High Voltage Amplifiers 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 °°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. * Indicates JEDEC registered data. FEATURES: • High Voltage: 250 to 500V • High Current: 2 Amps • Fast Switching: tf < 3µ µ sec. • Low VCE (SAT) • High Power: 35 Watts |
Аналогичный номер детали - 2N3583 |
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Аналогичное описание - 2N3583 |
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