2N3583 datasheet(1/3 Pages) MICROSEMI

номер детали	2N3583

подробное описание детали	5 Amp, 250V, High Voltage NPN Silicon Power Transistors

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MSC1055.PDF 05-19-99

2N3583

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

VCBO*

Collector-Base Voltage

250

Volts

VCEO*

Collector-Emitter Voltage

175

Volts

VCER*

Collector-Emitter Voltage RBE = 50Ω

Ω

250

Volts

VEBO*

Emitter-Base Voltage

6

Volts

IC*

Peak Collector Current

5

Amps

IC*

Continuous Collector Current

1

Amps

IB*

Base Current

1

Amps

TSTG*

Storage Temperature

-65 to 200

°°C

TJ*

Operating Junction Temperature

-65 to 200

°°C

*

Lead Temperature 1/16" from Case for 10 Sec.

235

°°C

PT*

θθ JC

Power Dissipation

TC = 25°°C

Thermal Impedance

35

5.0

Watts

°°C/W

5 Amp, 250V,

High Voltage

NPN Silicon Power

Transistors

TO-66

APPLICATIONS:

•

Off-Line Inverters

•

Deflection Circuits

•

Switching Regulators

•

DC-DC Converters

•

Motor Controls

•

High Voltage Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200

°°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

*

Indicates JEDEC registered data.

FEATURES:

•

High Voltage: 250 to 500V

•

High Current: 2 Amps

•

Fast Switching: tf < 3µ

µ sec.

•

Low VCE (SAT)

•

High Power: 35 Watts

Аналогичный номер детали - 2N3583

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Mospec Semiconductor	2N3583	217Kb / 4P	POWER TRANSISTORS(35W)
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Аналогичное описание - 2N3583

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	2N3584	64Kb / 3P	5 Amp, 375V, High Voltage NPN Silicon Power Transistors
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