поискавой системы для электроныых деталей |
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2N2222AUC-1 датащи(PDF) 2 Page - Microsemi Corporation |
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2N2222AUC-1 датащи(HTML) 2 Page - Microsemi Corporation |
2 / 2 page 2 Electrical Characteristics @ Tj = 25 °C Symbol Parameter Conditions Min Max Unit OFF CHARACTERISTICS V(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc 75 Vdc V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc 6 Vdc V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed 50 Vdc ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc 50 nAdc ICBO1 Collector to Base Cutoff Current Bias Cond. D, VCB=60Vdc 10 nAdc IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc 10 nAdc ON CHARACTERISTICS hFE1 Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc 50 hFE2 Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc 75 325 hFE3 Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc 100 hFE4 Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed 100 300 hFE5 Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed 30 VCE(sat)1 Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.3 Vdc VCE(sat)2 Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 1 Vdc VBE(sat)1 Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.6 1.2 Vdc VBE(sat)2 Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 2 Vdc SMALL SIGNAL CHARACTERISTICS hfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz 50 /hfe/ Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2.5 Current Transfer Ratio Cobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz 8 pF Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 25 pF SWITCHING CHARACTERISTICS ton Saturated Turn-on Time As defined in 19500/255 Figure 8 45 nS toff Saturated Turn-off Time As defined in 19500/255 Figure 9 300 nS |
Аналогичный номер детали - 2N2222AUC-1 |
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Аналогичное описание - 2N2222AUC-1 |
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