поискавой системы для электроныых деталей |
|
MTV6N100E датащи(PDF) 4 Page - ON Semiconductor |
|
MTV6N100E датащи(HTML) 4 Page - ON Semiconductor |
4 / 11 page MTV6N100E http://onsemi.com 4 TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 700 800 900 10 100°C 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS = 0 V TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 04 8 12 16 20 12 8 2 6 10 14 18 4 5 V VDS ≥ 10 V 2.0 2.8 3.6 4.4 5.2 2.4 3.2 4.0 4.8 10 12 8 4 0 TJ = −55°C 100°C 2 6 4 V 10 6 2 0 6 V TJ = 25°C VGS = 10 V 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) TJ = 25°C VGS = 10 V 15 V 1.24 1.44 1.56 1.32 02 8 11 17 9 1 02 6 8 0.5 1.3 2.1 2.9 2.5 1.7 0.9 410 12 TJ = 100°C 25°C −55°C VGS = 10 V 1.40 1.48 1.52 1.36 1.28 35 46 10 TJ, JUNCTION TEMPERATURE (°C) −50 0.4 0.8 1.2 2.0 2.8 −25 0 25 50 75 100 125 150 VGS = 10 V ID = 3 A 2.4 1.6 |
Аналогичный номер детали - MTV6N100E |
|
Аналогичное описание - MTV6N100E |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |