поискавой системы для электроныых деталей |
|
IRF530 датащи(PDF) 2 Page - ON Semiconductor |
|
IRF530 датащи(HTML) 2 Page - ON Semiconductor |
2 / 7 page IRF530 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 100 — — 112 — — Vdc V/°C Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 mAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage Cpk ≥ 2.0(3) (VDS = VGS, ID = 0.25 mA) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 — 2.9 6.2 4.0 — Vdc mV/°C Static Drain−to−Source On−Resistance Cpk ≥ 2.0(3) (VGS = 10 Vdc, ID = 8.0 Adc) RDS(on) — 0.098 0.140 Ohms Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 14 Adc) (VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C) VDS(on) — — — — — — Vdc Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) gFS 4.0 7.4 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 700 800 pF Output Capacitance Coss — 200 500 Transfer Capacitance Crss — 65 150 SWITCHING CHARACTERISTICS(2) Turn−On Delay Time (VDS = 36 Vdc, ID = 8.0 Adc, VGS = 10 Vdc, RG = 15 Ω) td(on) — 9.0 30 ns Rise Time tr — 47 75 Turn−Off Delay Time td(off) — 33 40 Fall Time tf — 34 45 Gate Charge (VDS = 80 Vdc, ID = 14 Adc, VGS = 10 Vdc) QT — 26 40 nC Q1 — 5.0 — Q2 — 13 — Q3 — 11 — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 14 Adc, VGS = 0 Vdc) (IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.92 0.80 1.5 — Vdc Reverse Recovery Time (IS = 14 Adc, dIS/dt = 100 A/μS) trr — 103 — nS ta — 78 — tb — 25 — Reverse Recovery Stored Charge QRR — 0.46 — mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) Ld — 3.5 — nH Internal Source Inductance (Measured from screw on tab to source bond pad) Ls — 7.5 — (1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Cpk + Max limit – Typ 3 sigma |
Аналогичный номер детали - IRF530 |
|
Аналогичное описание - IRF530 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |