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IRF530 датащи(PDF) 2 Page - ON Semiconductor

номер детали IRF530
подробное описание детали  N?묬hannel Enhancement?묺ode Silicon Gate
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

IRF530 датащи(HTML) 2 Page - ON Semiconductor

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IRF530
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
112
Vdc
V/°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
Cpk ≥ 2.0(3)
(VDS = VGS, ID = 0.25 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.9
6.2
4.0
Vdc
mV/°C
Static Drain−to−Source On−Resistance
Cpk ≥ 2.0(3)
(VGS = 10 Vdc, ID = 8.0 Adc)
RDS(on)
0.098
0.140
Ohms
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 14 Adc)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C)
VDS(on)
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
4.0
7.4
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
700
800
pF
Output Capacitance
Coss
200
500
Transfer Capacitance
Crss
65
150
SWITCHING CHARACTERISTICS(2)
Turn−On Delay Time
(VDS = 36 Vdc, ID = 8.0 Adc,
VGS = 10 Vdc, RG = 15 Ω)
td(on)
9.0
30
ns
Rise Time
tr
47
75
Turn−Off Delay Time
td(off)
33
40
Fall Time
tf
34
45
Gate Charge
(VDS = 80 Vdc, ID = 14 Adc,
VGS = 10 Vdc)
QT
26
40
nC
Q1
5.0
Q2
13
Q3
11
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 14 Adc, VGS = 0 Vdc)
(IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.92
0.80
1.5
Vdc
Reverse Recovery Time
(IS = 14 Adc,
dIS/dt = 100 A/μS)
trr
103
nS
ta
78
tb
25
Reverse Recovery Stored Charge
QRR
0.46
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Ld
3.5
nH
Internal Source Inductance
(Measured from screw on tab to source bond pad)
Ls
7.5
(1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk + Max limit – Typ
3
sigma


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