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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NCE60R180T датащи(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE60R180T датащи(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 2 NCE60R180T Parameter Symbol NCE60R180T Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE60R180T Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 0.62 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62.5 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=600V,VGS=0V 0.05 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=600V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10.5A 150 180 mΩ Dynamic Characteristics Forward Transconductance gFS VDS = 20V, ID = 10.5A 17.5 S Input Capacitance Clss 1950 PF Output Capacitance Coss 150 PF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz 5 PF Total Gate Charge Qg 45 70 nC Gate-Source Charge Qgs 9 nC Gate-Drain Charge Qgd VDS=480V,ID=21A, VGS=10V 18 nC Intrinsic gate resistance RG f = 1 MHz open drain 1 Ω Switching times Turn-on Delay Time td(on) 11 nS Turn-on Rise Time tr 6 nS Turn-Off Delay Time td(off) 61 100 nS Turn-Off Fall Time tf VDD=380V,ID=11A, RG=4Ω,VGS=10V 4.5 12 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD 21 A Pulsed Source-drain current(Body Diode) ISDM TC=25°C 63 A Forward on voltage VSD Tj=25°C,ISD=21A,VGS=0V 0.9 1.3 V Reverse Recovery Time trr 310 nS Reverse Recovery Charge Qrr 5 uC Peak Reverse Recovery Current Irrm Tj=25°C,IF=21A,di/dt=100A/μs 28 A Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, R G=25Ω |
Аналогичный номер детали - NCE60R180T |
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Аналогичное описание - NCE60R180T |
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